High-Performance Pentacene/ZnO UV-Visible Photodetector Using Solution Method

被引：23
|
作者：
Srivastava, Anshika [1 ]
Jit, Satyabrata [2 ]
Tripathi, Shweta [1 ]
机构：
[1] Motilal Nehru Natl Inst Technol Allahabad, Prayagraj 211004, India
[2] IIT BHU Varanasi, Varanasi 221005, Uttar Pradesh, India
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 07期
关键词：
Photodetectors; Pentacene; Zinc oxide; II-VI semiconductor materials; Absorption; X-ray scattering; Charge carrier processes; Detectivity; external quantum efficiency (EQE); pentacene; photodetector; responsivity; ultraviolet (UV)-visible; ZnO; ORGANIC PHOTODETECTORS; LAYER; FABRICATION; PHOTODIODE; FILM;
D O I：
10.1109/TED.2021.3077348
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work reports a Pd/Al2O3/ZnO/pentacene/PEDOT:PSS/indium-doped tin oxide (ITO) structure-based high-performanceultraviolet (UV)-visible photodetectorfabricatedon an ITOsubstrate. The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) acts as the hole transport layer (HTL), while aluminum oxide (Al2O3) acts as a hole blocking layer (HBL) to reduce the dark current. At -1 V bias voltage, the proposed device shows the responsivity, sensitivity, detectivity, and external quantum efficiency (EQE) of 25.51 A/W, 2574.19, 1.52 x 10(16) Jones, and 10171% at 311 nm (UV region) while the corresponding values at 565 nm (visible region) are found to be 0.36 A/W, 346.66, 2.17 x 10(14) Jones, and 79.65%, respectively.
引用
收藏
页码：3439 / 3445
页数：7
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