The influence of defect drift in external electric field on green luminescence of ZnO single crystals

被引：134

作者：

Korsunska, NO ^{[1
]}

Borkovska, LV ^{[1
]}

Bulakh, BM ^{[1
]}

Khomenkova, LY ^{[1
]}

Kushnirenko, VI ^{[1
]}

Markevich, IV ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

来源：

JOURNAL OF LUMINESCENCE | 2003年 / 102卷

关键词：

photoluminescence; defect drift in electric field;

D O I：

10.1016/S0022-2313(02)00634-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In nominally undoped ZnO single crystals, the influence of electric field on photoluminescence in visible wavelength range was investigated. A well-known broad unstructured band consisting of green and orange ones was observed. It was found that the action of direct electric field of about 100 V/cm at 600-700degreesC resulted in the increase of green band intensity near the cathode and its decrease near the anode, while orange band intensity was not influenced by this treatment. The redistribution of green band intensity along the sample under electric field is accounted for by drift of zinc interstitials from the anode to the cathode. It is supposed that emitting centres responsible for green luminescence are complex defects including zinc interstitials. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：733 / 736

页数：4

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