A detailed study of the effects of hydrogen plasma passivation in p-type ZnSe:N

被引:0
|
作者
Meredith, W [1 ]
Brownlie, GD [1 ]
Milnes, JS [1 ]
Hauksson, IS [1 ]
Prior, KA [1 ]
Cavenett, BC [1 ]
机构
[1] HERIOT WATT UNIV,DEPT PHYS,EDINBURGH EH14 4AS,MIDLOTHIAN,SCOTLAND
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:309 / 312
页数:4
相关论文
共 50 条
  • [1] P-TYPE AND N-TYPE DOPING OF ZNSE - EFFECTS OF HYDROGEN INCORPORATION
    FISHER, PA
    HO, E
    HOUSE, JL
    PETRICH, GS
    KOLODZIEJSKI, LA
    WALKER, J
    JOHNSON, NM
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 729 - 733
  • [2] HYDROGEN DIFFUSION AND PASSIVATION PROCESSES IN P-TYPE AND N-TYPE CRYSTALLINE SILICON
    RIZK, R
    DEMIERRY, P
    BALLUTAUD, D
    AUCOUTURIER, M
    MATHIOT, D
    PHYSICAL REVIEW B, 1991, 44 (12): : 6141 - 6151
  • [3] Hydrogen passivation in n- and p-type 6H-SiC
    Ren, F
    Grow, JM
    Bhaskaran, M
    Wilson, RG
    Pearton, SJ
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 198 - 202
  • [4] Hydrogen passivation in n- and p-type 6H-SiC
    F. Ren
    J. M. Grow
    M. Bhaskaran
    R. G. Wilson
    S. J. Pearton
    Journal of Electronic Materials, 1997, 26 : 198 - 202
  • [5] HYDROGEN PASSIVATION OF SHALLOW ACCEPTORS IN P-TYPE INP
    CHEVALLIER, J
    JALIL, A
    THEYS, B
    PESANT, JC
    AUCOUTURIER, M
    ROSE, B
    MIRCEA, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (02) : 87 - 90
  • [6] HYDROGEN DIFFUSION AND ACCEPTOR PASSIVATION IN P-TYPE GAAS
    RAHBI, R
    PAJOT, B
    CHEVALLIER, J
    MARBEUF, A
    LOGAN, RC
    GAVAND, M
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (04) : 1723 - 1731
  • [8] P-TYPE DOPING OF ZNSE - ON THE PROPERTIES OF NITROGEN IN ZNSE-N
    KURTZ, E
    EINFELDT, S
    NURNBERGER, J
    ZERLAUTH, S
    HOMMEL, D
    LANDWEHR, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 187 (02): : 393 - 399
  • [9] Ohmic contacts to n-type and p-type ZnSe
    Park, MR
    Anderson, WA
    Jeon, M
    Luo, H
    SOLID-STATE ELECTRONICS, 1999, 43 (01) : 113 - 121
  • [10] Precipitates and hydrogen passivation at crystal defects in n- and p-type multicrystalline silicon
    Geerligs, L. J.
    Komatsu, Y.
    Roever, I.
    Wambach, K.
    Yamaga, I.
    Saitoh, T.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (09)