QUANTUM INTERFERENCE;
ELECTRONIC-STRUCTURE;
VALLEY POLARIZATION;
SEMICONDUCTORS;
PHOTOCURRENT;
GENERATION;
CURRENTS;
D O I:
10.1103/PhysRevB.93.115433
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Two-dimensional transition-metal dichalcogenide materials have recently attracted great attention from the scientific community due to their interesting properties such as the presence of an energy band gap and the support of spin-polarized states. In particular, monolayer molybdenum disulfide has a structure with no inversion symmetry and, thus, presents a large spin-splitting of the top valence bands. This latter fact makes it favorable for studies of optical spin injection, a phenomenon that, under incidence of circularly polarized light, creates spin-polarized electrons in the conduction bands. Here, we perform a theoretical study of the one-photon optical spin and current injection on transition-metal dichalcogenide monolayers of molybdenum disulfide. In particular, we present calculations for spectra of the degree of spin polarization, which are calculated in a full-band structure scheme employing density functional theory; besides the so-called quasiparticle GW approximation is applied for the calculation of the band gap energy correction. Our results show 100% of spin polarization of the electrons for the one monolayer structure at the K valley. The degree of spin polarization also presents a net maximum value at the direct energy band gap at K as the number of monolayers increases.
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Zeng, Hualing
Dai, Junfeng
论文数: 0引用数: 0
h-index: 0
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
S Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Dai, Junfeng
Yao, Wang
论文数: 0引用数: 0
h-index: 0
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Yao, Wang
Xiao, Di
论文数: 0引用数: 0
h-index: 0
机构:
Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USAUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
Xiao, Di
Cui, Xiaodong
论文数: 0引用数: 0
h-index: 0
机构:
Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R ChinaUniv Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
机构:
Inst Basic Sci IBS, Ctr Theoret Phys Complex Syst, Daejeon 34126, South Korea
Korea Univ Sci & Technol UST, Basic Sci Program, Daejeon 34113, South KoreaInst Basic Sci IBS, Ctr Theoret Phys Complex Syst, Daejeon 34126, South Korea
Sonowal, K.
V. Boev, D.
论文数: 0引用数: 0
h-index: 0
机构:Inst Basic Sci IBS, Ctr Theoret Phys Complex Syst, Daejeon 34126, South Korea
V. Boev, D.
Kalameitsev, A. V.
论文数: 0引用数: 0
h-index: 0
机构:
Rzhanov Inst Semicond Phys, Siberian Branch Russian Acad Sci, Novosibirsk 630090, RussiaInst Basic Sci IBS, Ctr Theoret Phys Complex Syst, Daejeon 34126, South Korea
Kalameitsev, A. V.
Kovalev, V. M.
论文数: 0引用数: 0
h-index: 0
机构:
Rzhanov Inst Semicond Phys, Siberian Branch Russian Acad Sci, Novosibirsk 630090, Russia
Novosibirsk State Tech Univ, Novosibirsk 630073, RussiaInst Basic Sci IBS, Ctr Theoret Phys Complex Syst, Daejeon 34126, South Korea
Kovalev, V. M.
Savenko, I. G.
论文数: 0引用数: 0
h-index: 0
机构:
Inst Basic Sci IBS, Ctr Theoret Phys Complex Syst, Daejeon 34126, South Korea
Korea Univ Sci & Technol UST, Basic Sci Program, Daejeon 34113, South KoreaInst Basic Sci IBS, Ctr Theoret Phys Complex Syst, Daejeon 34126, South Korea
机构:
Sun Yat Sen Univ, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R ChinaSun Yat Sen Univ, Sch Phys, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China