Effect of in situ Sb doping on crystalline and electrical characteristics of n-type Ge1-xSnx epitaxial layer

被引：5

作者：

Jeon, Jihee ^{[1
]}

Asano, Takanori ^{[1
,2
]}

Shimura, Yosuke ^{[1
]}

Takeuchi, Wakana ^{[1
]}

Kurosawa, Masashi ^{[1
,3
]}

Sakashita, Mitsuo ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Zaima, Shigeaki ^{[1
,3
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan

[2] Japan Soc Promot Sci, Chiyoda Ku, Tokyo 1020083, Japan

[3] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

关键词：

MOLECULAR-BEAM EPITAXY; GERMANIUM; ACTIVATION; SURFACE; GROWTH; GE;

D O I：

10.7567/JJAP.55.04EB13

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examined the molecular beam epitaxy of Ge1-xSnx with in situ Sb doping on Ge substrates. The effects of Sb doping on the crystalline and electrical characteristics of Ge1-xSnx epitaxial layer were investigated in detail. We found that Sb doping with a concentration of 10(20) cm(-3) remarkably improves the crystallinity, and surface uniformity of the Ge1-xSnx epitaxial layer by changing the growth mode by the surfactant effect of Sb atoms. Low-temperature Ge1-xSnx growth with in situ Sb doping realizes a very high electron concentration of 10(20) cm(-3), which is above the thermal equilibrium solid solubility, as a result of suppressing Sb segregation and precipitation. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

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