Signal fluctuation in neutron-irradiated silicon Avalanche Photodiodes

被引:1
|
作者
Pilicer, Ercan [1 ]
Tapan, Ilhan [1 ]
机构
[1] Uludag Univ, Dept Phys, TR-16059 Bursa, Turkey
关键词
Monte Carlo simulation; lead-tungstate crystal; avalanche photodiodes; radiation damage; signal fluctuation;
D O I
10.1016/j.nima.2006.10.263
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Light from PbWO4 crystals in the barrel part of the CMS electromagnetic calorimeter will be detected by Avalanche Photodiodes (APDs). The crystal-APD system has to operate reliably in a high radiation environment. In the present paper, APD signal variation with wavelength and gain fluctuations for PbW04 scintillation light was investigated as a function of the neutron fluence. Calculations were made with a single-particle Monte Carlo simulation technique. The results show that the neutron fluence has an influence on the APD signal during 10 years CMS operation. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:291 / 293
页数:3
相关论文
共 50 条
  • [1] Excess noise factor of neutron-irradiated silicon avalanche photodiodes
    Pilicer, E
    Kocak, F
    Tapan, I
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2005, 552 (1-2): : 146 - 151
  • [2] NONORIENTABLE DIVACANCIES IN NEUTRON-IRRADIATED SILICON
    DVURECHENSKII, AV
    KARANOVICH, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (11): : 1198 - 1200
  • [3] ANNEALING MECHANISMS IN NEUTRON-IRRADIATED SILICON
    THALER, SL
    CHANDRASEKHAR, HR
    CHANDRASEKHAR, M
    MEESE, JM
    PHYSICA B & C, 1983, 119 (03): : 325 - 329
  • [4] MULTIVACANCY CLUSTERS IN NEUTRON-IRRADIATED SILICON
    XU, YS
    LIU, CC
    LI, YX
    WANG, HM
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) : 6458 - 6460
  • [5] OPTICAL PROPERTIES OF NEUTRON-IRRADIATED SILICON
    KOVAL, YP
    MORDKOVI.VN
    TEMPER, EM
    KHARCHEN.VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1152 - 1155
  • [6] Capacitive effects in neutron-irradiated silicon diodes
    McPherson, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 488 (1-2): : 100 - 109
  • [7] Ultrasonic attenuation measurements in neutron-irradiated silicon
    Coeck, M
    Laermans, C
    JOURNAL DE PHYSIQUE IV, 1996, 6 (C8): : 625 - 628
  • [8] SUPERFLUID HELIUM INSIDE NEUTRON-IRRADIATED SILICON
    KEESOM, PH
    SEIDEL, G
    PHYSICAL REVIEW, 1958, 111 (02): : 422 - 424
  • [9] Raman scattering measurements in neutron-irradiated silicon
    Coeck, M
    Laermans, C
    Provoost, R
    Silverans, RE
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 623 - 627
  • [10] Origin of infrared bands in neutron-irradiated silicon
    Sarlis, NV
    Londos, CA
    Fytros, LG
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (04) : 1645 - 1650