Low-harmonic distortion in single-ended and push-pull class E power amplifier by using slotted microstrip lines

被引：7

作者：

Tirado-Mendez, Alfredo ^{[1
,2
]}

Jardon-Aguilar, Hildeberto ^{[1
]}

Flores-Leal, Ruben ^{[1
]}

Andrade-Gonzalez, Edgar ^{[2
]}

Reyes-Ayala, Mario ^{[2
]}

机构：

[1] IPN, Res & Adv Studies Ctr, Telecom Sect, Mexico City 07360, DF, Mexico

[2] Metropolitan Autonomous Univ Azcapotzalco, Dept Elect, Mexico City 02200, DF, Mexico

来源：

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2010年 / 64卷 / 01期

关键词：

High Power Added Efficiency; Low-harmonic distortion; Class E power amplifier; Defected ground structure; Defected microstrip structure; DEFECTED GROUND STRUCTURE; DESIGN;

D O I：

10.1016/j.aeue.2008.11.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a very low-harmonic distortion with high power-added efficiency (PAE) power amplifier (PA) with slotted microstrip lines is reported. The circuit is a push-pull class E amplifier, terminated with defected structures to improve the spectrum purity and efficiency. The relationship of the second and third harmonic to the fundamental is 70 and 54 dBc, respectively. The amplifier is developed with HBT medium power transistors. The circuit works at 1.8 GHz obtaining a PAE close to 60%, delivering an output power of 24 dBm with a power gain of 13.3 dB. (C) 2008 Elsevier GmbH. All rights reserved.

引用

页码：66 / 74

页数：9

共 35 条

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