Magnetodynamic Properties of Rare-Earth-Doped Permalloy Nanowires

被引:2
|
作者
Saini, Jyoti [1 ]
Sharma, Monika [1 ]
Kuanr, Bijoy Kumar [1 ]
机构
[1] Jawaharlal Nehru Univ, Special Ctr Nanosci, New Delhi 110067, India
关键词
Electrodeposition; ferromagnetic resonance (FMR); magnetic damping; magnetodynamics; nanowires;
D O I
10.1109/TMAG.2020.3023161
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigated the effect of rare-earth (RE) element doping on magnetodynamic properties of 1D Ni80Fe20 (Py) nanowires. 5% of doping of RE element (La, Nd, and Sm) in Py nanowires was successfully done by electrodeposition technique in porous anodic alumina template. It is observed by the X-ray diffraction (XRD) measurements that the crystal structure of Py nanowires decreases from polycrystalline to amorphous phase with doping of RE element. The magnetic properties demonstrated that the saturation magnetization decreases upto 98% with the higher atomic number RE dopant. The ferromagnetic resonance measurements in field-sweep mode were done to analyze the magnetization dynamics of RE-doped nanowires. The fitting of resonance field and field linewidth was done by using the Landau-Lifshitz-Gilbert equation. It is observed that the resonance field increases with Sm doping as compared to La doping. The damping constants have been achieved by decocting the extrinsic linewidth and found to increase by similar to 12 times with RE doping. The increase of Gilbert damping emanates from the enhancement of L-S coupling in Py nanowires.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] Effect of Dilute Rare-Earth Doping on Magnetodynamic Properties of Permalloy Films
    Chen, Qian
    Yin, Yuli
    Yuan, Honglei
    Zhou, Xiaochao
    Huang, Zhaocong
    Du, Jun
    Zhai, Ya
    IEEE MAGNETICS LETTERS, 2019, 10
  • [2] Magnetic properties of rare-earth-doped GaN
    Bang, H
    Sawahata, J
    Piao, G
    Tsunemi, M
    Yanagihara, H
    Kita, E
    Akimoto, K
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2874 - 2877
  • [3] Rare-earth-doped sesquioxides
    Petermann, K
    Huber, G
    Fornasiero, L
    Kuch, S
    Mix, E
    Peters, V
    Basun, SA
    JOURNAL OF LUMINESCENCE, 2000, 87-9 (87) : 973 - 975
  • [4] Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
    A. J. Steckl
    J. M. Zavada
    MRS Bulletin, 1999, 24 : 33 - 38
  • [5] Structure and properties of rare-earth-doped glassy systems
    El-Okr, M.
    Ibrahem, M.
    Farouk, M.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (10) : 2564 - 2567
  • [6] Properties of rare-earth-doped lead and germanium chalcogenides
    Shvangiradze, RR
    Kutsiya, NM
    INORGANIC MATERIALS, 1999, 35 (09) : 887 - 891
  • [7] Optoelectronic properties and applications of rare-earth-doped GaN
    Steckl, AJ
    Zavada, JM
    MRS BULLETIN, 1999, 24 (09) : 33 - 38
  • [8] Magnetic properties of the rare-earth-doped semiconductor GaEuN
    Tanaka, H
    Hashimoto, M
    Emura, S
    Yanase, A
    Asano, R
    Zhou, YK
    Bang, H
    Akimoto, K
    Honma, T
    Umesaki, N
    Asahi, H
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2864 - 2868
  • [9] FORMATION AND PROPERTIES OF POLYCRYSTALLINE FILMS OF RARE-EARTH-DOPED SILICON
    KOLESHKO, VM
    KOVALEVSKII, AA
    LAPITSKII, EI
    INORGANIC MATERIALS, 1981, 17 (11) : 1441 - 1445
  • [10] Luminescence properties of rare-earth-doped fluoride borate crystals
    Bekker, Tatyana B.
    Ryadun, Alexey A.
    V. Davydov, Alexey
    Solntsev, Vladimir P.
    Grigorieva, Veronika D.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 900