Stabilization of Broad Area Semiconductor Amplifiers by Spatially Modulated Potentials

被引：1

作者：

Kumar, S. ^{[1
]}

Ahmed, W. W. ^{[1
]}

Herrero, R. ^{[1
]}

Botey, M. ^{[1
]}

Radziunas, M. ^{[2
]}

Staliunas, K. ^{[1
,3
]}

机构：

[1] Univ Politecn Cataluna, Dept Fis & Engn Nucl, Colom 11, E-08222 Barcelona, Spain

[2] Leibniz Inst Forschungsverbund Berlin eV, Weierstrass Inst Appl Anal & Stochast, Mohrenstr 39, D-10117 Berlin, Germany

[3] ICREA, Passeig Lluis Co 23, E-08010 Barcelona, Spain

来源：

NONLINEAR DYNAMICS: MATERIALS, THEORY AND EXPERIMENTS | 2016年 / 173卷

关键词：

LASERS;

D O I：

10.1007/978-3-319-24871-4_10

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We propose the stabilization of the output beam of Broad Area Semiconductor (BAS) amplifiers through the introduction of a spatially periodic modulated potential. We show that a periodic modulation of the pump profile in transverse and longitudinal directions, under certain 'resonance' condition, can solve two serious problems of BAS amplifiers (and possibly lasers), which are (i) the lack of an intrinsic spatial mode selection mechanism in linear amplification regimes and (ii) the modulation instability (also called Bespalov-Talanov instability) in nonlinear regimes. The elimination of these two drawbacks can significantly improve the spatial quality of the emitted beam in BAS amplifiers.

引用

页码：139 / 151

页数：13