Dissipation Effects of the Phase in Higher Order Switching Events of Intrinsic Josephson Junctions

被引:12
|
作者
Kakehi, Daiki [1 ]
Takahashi, Yusaku [1 ]
Yamaguchi, Hikaru [1 ]
Koizumi, Shin-ichiro [1 ]
Ayukawa, Shin-ya [1 ]
Kitano, Haruhisa [1 ]
机构
[1] Aoyama Gakuin Univ, Dept Math & Phys, Kanagawa 2525258, Japan
基金
日本学术振兴会;
关键词
High-temperature superconductors; Josephson junctions; nanofabrication; tunneling;
D O I
10.1109/TASC.2016.2515585
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a study on the phase switching dynamics of small intrinsic Josephson junctions (IJJs) built in a narrow bridge of single crystalline Bi2Sr2CaCu2Oy. We focus on the higher order switches from the finite resistive states in the multiple-branched I-V curves. In contrast to the first switch (1st SW), i.e., a switch from the zero voltage state to the first resistive state, the phase switching rates for higher order switches such as the 3rd SW and the 4th SW show a large deviation from the conventional exponential behavior as a function of bias current. These behaviors were successfully explained by considering the multiple-retrapping processes after the phase escape. We discuss that the dissipation in the higher order switch plays an important role in the multiple phase retrappings rather than the self-heating of IJJs.
引用
收藏
页数:4
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