Gate-controlled switching between persistent and inverse persistent spin helix states

被引:25
|
作者
Yoshizumi, K. [1 ]
Sasaki, A. [1 ]
Kohda, M. [1 ]
Nitta, J. [1 ]
机构
[1] Tohoku Univ, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
基金
日本学术振兴会;
关键词
QUANTUM-WELLS; ORBIT INTERACTION; SEMICONDUCTORS; ELECTRONS;
D O I
10.1063/1.4944931
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric spin states showing weak localization effect give rise to a long spin coherence when the strength of Rashba spin-orbit interaction (SOI) is close to that of Dresselhaus SOI. Furthermore, in the middle of two persistent spin helix states, where the Rashba SOI can be negligible, the bulk Dresselhaus SOI parameter in a modulation doped InGaAs/InAlAs quantum well is determined. (C) 2016 AIP Publishing LLC.
引用
收藏
页数:4
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