Domain patterns in the microwave-induced zero-resistance state

被引:13
|
作者
Finkler, Ilya [1 ]
Halperin, Bertrand I.
Auerbach, Assa
Yacoby, Amir
机构
[1] Harvard Univ, Phys Labs, Cambridge, MA 02138 USA
[2] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel
[3] Weizmann Inst Sci, Dept Phys, IL-76100 Rehovot, Israel
基金
美国国家科学基金会;
关键词
quantum Hall effect; two-dimensional electron gas; mesoscopic systems; photoconductivity;
D O I
10.1007/s10955-006-9037-7
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
It has been proposed that the microwave-induced "zero-resistance" phenomenon, observed in a GaAs two-dimensional electron system at low temperatures in moderate magnetic fields, results from a state with multiple domains, in which a large local electric field E(r) is oriented in different directions. We explore here the questions of what may determine the domain arrangement in a given sample, what do the domains look like in representative cases, and what may be the consequences of domain-wall localization on the macroscopic dc conductance. We consider both effects of sample boundaries and effects of disorder, in a simple model, which has a constant Hall conductivity, and is characterized by a Lyapunov functional.
引用
收藏
页码:1097 / 1111
页数:15
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