Synthesis of ZnO nanowire array film on Mg doped gallium nitride substrate

ZnO nanowirearray films, composed of well aligned ZnO nanowires, similar to 200 nm in diameter and 1 mu m in length, were successfully synthesised on Mg doped gallium nitride by hydrothermal method. In addition, the films possess quite flatten surface. In the synthesised process, there was no catalyst that had been used. Growth conditions were comprehensively discussed in the process of aqueous solution method. It was found that the length of ZnO nanowires and the thickness of the film could be tunable by altering solution concentration and growth time. Such ZnO film assembled with vertically aligned nanowire may have potential applications as UV light emitting diodes.