Defect-rich 2D reticulated MoS2 monolayers: Facile hydrothermal preparation and marvellous photoelectric properties

被引:24
|
作者
Zhang, Zhanfei [1 ]
Dong, Yan [1 ]
Sun, Hui [1 ]
Liu, Guangyi [1 ]
Liu, Sheng [1 ]
Yang, Xianglin [1 ]
机构
[1] Cent South Univ, Coll Chem & Chem Engn, Changsha 410083, Hunan, Peoples R China
关键词
Defect-rich 2D reticulated monolayer; MoS2; Hydrogen evolution reaction; Photo-catalytic degradation; Hydrothermal preparation; HYDROGEN EVOLUTION REACTION; ACTIVE EDGE SITES; VISIBLE-LIGHT; PHOTOCATALYTIC DEGRADATION; LAYER MOS2; NANOSHEETS; ELECTROCATALYSTS; SPECTROSCOPY; EXFOLIATION; PERFORMANCE;
D O I
10.1016/j.jtice.2019.04.035
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
To add defects in MoS2 monolayer will activate the inert basal plane and deliver active sites, thus to improve its electronic and photoelectric properties. By using surfactant ethyl xanthate (C2H50C(=S)SNa) as sulfur source, the defect-rich MoS2 monolayer with two-dimensional reticulated structure was facilely prepared via a conventional hydrothermal approach. XRD, Raman spectra and FESEM/EDS recommended that the as-prepared MoS2 was a rich-Mo and deficient-S material with an amorphous structure. HRTEM inferred that the MoS2 might be mainly composed by monolayer extending through (100) plane. AFM clearly displayed that the MoS2 nanosheet existed as a defect-rich 2D reticulated monolayer with a thickness of similar to 0.62 nm. XPS further verified that there were rich Mo and S vacancies. The defect-rich 2D reticulated MoS2 possessed an excellent hydrogen evolution reaction (HER) activity with 58.4 mV/dec Tafel slope, 235 mV hydrogen evolution potential, 4.99 Omega charge transfer resistance and 19.63 mF/cm(2) double-layer capacitance. And it realized the admirable photoelectric conversion by generating efficiently-separated photoelectrons and holes. The degradation quantity of hexyl xanthate photo-catalyzed by 1 g MoS2 reached similar to 3400 mg under visible light exposure of 10 h. (C) 2019 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:221 / 230
页数:10
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