Physics of optimal resonant tunneling

被引:22
|
作者
Racec, PN [1 ]
Stoica, T [1 ]
Popescu, C [1 ]
Lepsa, M [1 ]
vandeRoer, TG [1 ]
机构
[1] EINDHOVEN UNIV TECHNOL,FAC ELECT ENGN,ED GRP,NL-5600 MB EINDHOVEN,NETHERLANDS
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 07期
关键词
D O I
10.1103/PhysRevB.56.3595
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier resonant-tunneling (DBRT) structure, is discussed. It is shown that its physics does not rest on the departure from the constant potential within the barriers and well, due to the applied electric field, but on the effective symmetry of the rectangular-barrier profile, which approximates the real potential profile for the corresponding applied bias.
引用
收藏
页码:3595 / 3597
页数:3
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