Benzene thermal conversion to nanocrystalline indium nitride from sulfide at low temperature

被引:61
|
作者
Xiao, JP
Xie, Y [1 ]
Tang, R
Luo, W
机构
[1] Univ Sci & Technol China, Struct Res Lab, Anhua 230026, Peoples R China
[2] Univ Sci & Technol China, Dept Chem, Anhua 230026, Peoples R China
关键词
D O I
10.1021/ic0258330
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
A benzene thermal conversion route has been successfully developed to prepare nanocrystalline indium nitride at 180-200 degreesC by choosing NaNH2 and In2S3 as novel nitrogen and indium sources. This route has been also extended to the synthesis of other group III nitrides. The product InN was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution TEM, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and infrared spectroscopy (IR). The optical properties of nanocrystalline InN were also recorded by means of UV-vis absorption spectroscopy and photoluminescence (PL) spectroscopy, indicating that the as-prepared sample was within the quantum confinement regime. Finally, the formation mechanism was also investigated.
引用
收藏
页码:107 / 111
页数:5
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