Measurement of the shot noise in a single-electron transistor

被引：17
|
作者：
Kafanov, S. [1 ]
Delsing, P. [1 ]
机构：
[1] Chalmers, S-41296 Gothenburg, Sweden
来源：
PHYSICAL REVIEW B | 2009年 / 80卷 / 15期
关键词：
CHARGE SENSITIVITY; COULOMB-BLOCKADE; TUNNEL-JUNCTIONS; HANBURY-BROWN; QUANTUM-NOISE; SUPPRESSION; OSCILLATIONS; LIMIT;
D O I：
10.1103/PhysRevB.80.155320
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.
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页数：5
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