Adsorption behaviour of PEI on silicon carbide powder

被引：0

作者：

Sun, J ^{[1
]}

Sun, WY ^{[1
]}

Gao, L ^{[1
]}

Guo, JK ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2000年 / 15卷 / 02期

关键词：

polyethylene imine (PEI); quantitative adsorption; UV spectrum silicon carbide;

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Adsorption behaviour of PEI on silicon carbide powder was measured by using UV spectrum. The surface charge of SiC powder was changed greatly after the addition of PEI, its IEP changed from pH=2.0 to pH=10.5. Adsorption isotherms of dispersant on the silicon carbide surface were investigated. Their adsorption behaviour belongs to Langmuir monolayer adsorption type. The maximum amount of PEI-H+ (pH=3.57) adsorbed on the SiC surface is 0.0172mg/mL and that of PEI-H+ (pH=6.61) is 0.0208mg/mL. IR spectra were obtained to verify this adsorption effect.

引用

页码：259 / 263

页数：5

共 8 条

[1] Processing of aqueous alpha-Al2O3, alpha-SiO2 and alpha-SiC suspensions with polyelectrolytes.
Baklouti, S
Pagnoux, C
Chartier, T
Baumard, JF
[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1997, 17 (12) : 1387 - 1392
[2] FEKE DL, 1987, 179634 NASA
[3] Pugh R.J., 1994, Surfactant Science Series, V51
[4] THE UPTAKE OF MG(II) ON ULTRAFINE ALPHA-SILICON CARBIDE AND ALPHA-ALUMINA
PUGH, RJ
BERGSTROM, L
[J]. JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1988, 124 (02) : 570 - 580
[5] RESCHKE WH, 1990, SILIKATTECHNIK, V41, P400
[6] EFFECTS OF ORGANIC DISPERSANTS ON THE DISPERSION, PACKING, AND SINTERING OF ALUMINA
SUMITA, S
RHINE, WE
BOWEN, HK
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1991, 74 (09) : 2189 - 2196
[7] USE OF COUPLING AGENTS AS A ROUTE TO IMPROVEMENT OF THE COMPRESSIBILITY OF FINE ZIRCONIA AND ALUMINA POWDERS
TAKAHASHI, M
HAYASHI, J
SUZUKI, K
SUZUKI, S
TAKAHASHI, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1993, 28 (12) : 3183 - 3186
[8] TSETSKA R, 1997, J COLLOID INTERF SCI, V196, P87

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