Boron redistribution during crystallization of phosphorus-doped amorphous silicon

被引：0
|
作者：
Simola, R. [1 ,2 ]
Mangelinck, D. [2 ]
Portavoce, A. [2 ]
Bernardini, J. [2 ]
Fornara, P. [2 ]
机构：
[1] Fac Sci & Tech St Jerome, L2MP, CNRS, UMR 6137, Case 142, F-13397 Marseille 13, France
[2] ST Microelect, F-13790 Rousset, France
来源：
ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷
关键词：
boron; phosphorus; amorphous silicon; crystallization; diffusion;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The redistribution of boron has been studied during solid phase crystallization (SPC) of a homogeneous phosphorus-doped amorphous silicon layer deposited by low pressure chemical vapor deposition, for different thermal annealing. We show that for the lower temperature annealing (T = 586 degrees C, 1h) boron diffuses without changing the P profile, while for the higher temperature annealing (T = 800 degrees C, 3h), the initially homogeneous P profile is modified, showing two concentration peaks.
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页码：125 / +
页数：2
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