First Tests of a New Facility for Device-Level, Board-Level and System-Level Neutron Irradiation of Microelectronics

被引：25

作者：

Cazzaniga, Carlo ^{[1
]}

Bagatin, Marta ^{[2
]}

Gerardin, Simone ^{[2
]}

Costantino, Alessandra ^{[3
]}

Frost, Christopher D. ^{[1
]}

机构：

[1] Rutherford Appleton Lab, ISIS Facil, STFC, Didcot OX11 0QX, Oxon, England

[2] Padova Univ, DEI, Via Gradenigo 6B, I-35131 Padua, PD, Italy

[3] ESA ESTEC, Noordwijk, Netherlands

来源：

IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING | 2021年 / 9卷 / 01期

关键词：

Neutron radiation effects; nuclear measurements; particle beams;

D O I：

10.1109/TETC.2018.2879027

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The very limited availability of fast neutron facilities, particularly in Europe, for testing of microelectronics has motivated the construction of ChipIr, a new beamline at the ISIS neutron and muon source in the UK. ChipIr has been designed for Single Event Effect testing at the device-level, board-level and system-level which requires a beam of uniform intensity over a selectable area in the order of hundreds of cm(2). Measurements of the beam uniformity are presented in this paper. A memory chip of interest for space applications, based on SRAMs and developed by ESA for monitoring of radiation fields, has been used for a comparative characterization of the beam. Consistent results have been found, giving confidence on the intensity and shape of the fast neutron spectrum of ChipIr.

引用

页码：104 / 108

页数：5

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