Tip-induced domain protrusion in ferroelectric films with in-plane polarization

被引:1
|
作者
Kondovych, S. [1 ,2 ]
Gruverman, A. [3 ]
Luk'yanchuk, I [1 ,4 ]
机构
[1] Univ Picardie, Lab Condensed Matter Phys, 33 Rue St Leu, F-80039 Amiens, France
[2] Life Chem Inc, Murmanska St 5, UA-02660 Kiev, Ukraine
[3] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA
[4] Southern Fed Univ, Fac Phys, 5 Zorge Str, Rostov Na Donu 344090, Russia
基金
欧盟地平线“2020”;
关键词
NEGATIVE CAPACITANCE; DYNAMICS;
D O I
10.1063/5.0035950
中图分类号
O59 [应用物理学];
学科分类号
摘要
Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electronics. Harnessing the polarization energy and electrostatic forces with specific geometry of the system enables producing the nanoscale domains by-design. Along with that, domain engineering requires mastery of underlying physical mechanisms that govern the domain formation. Here, we present a theoretical description of the domain formation by a scanning probe microscopy tip in a ferroelectric film with strong in-plane anisotropy of polarization. We demonstrate that local charge injection produces wedge-shaped domains that propagate along the anisotropy axis, whereas the tip-written lines of charge generate a comb-like domain structure. The results of our calculations agree with earlier experimental observations and allow for the optimization of the targeted domain structures.
引用
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页数:5
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