Electron scattering in thin GaAs quantum wires

被引：0
|
作者：
Pozdnyakov, D. V. [1 ]
Galenchik, V. O. [1 ]
Borzdov, A. V. [1 ]
机构：
[1] Belarusian State Univ, Radiophys & Elect Dept, Minsk 220050, BELARUS
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2006年 / 2卷
关键词：
electron scattering; quantum wire; collisional broadening;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper the scattering rates of electrons in thin free standing GaAs quantum wires in the electric quantum limit are calculated self-consistently taking into account the collisional broadening caused by scattering processes. The following mechanisms of scattering are considered: one-dimensional acoustic and polar optic phonons, surface roughness and ionized impurities. The non-parabolicity of electron energy spectrum is also taken into account.
引用
收藏
页码：87 / 90
页数：4
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