Preparation of Cu2Te Thin Films and Back-Contact Formation of CdTe Solar Cells

被引：19

作者：

Lv, Bin ^{[1
]}

Di, Xia ^{[1
]}

Li, Wei ^{[1
]}

Feng, Lianghuan ^{[1
]}

Lei, Zhi ^{[1
]}

Zhang, Jingquan ^{[1
]}

Wu, Lili ^{[1
]}

Cai, Yaping ^{[1
]}

Li, Bing ^{[1
]}

Sun, Zhen ^{[1
]}

机构：

[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 08期

关键词：

Thin films;

D O I：

10.1143/JJAP.48.085501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu2Te thin films were prepared by a coevaporation method. The structural, optical, and electronic properties of Cu2Te thin films were investigated using X-ray diffraction, UV-visible-IR transmittance and reflectance spectra, and Hall measurements. The results show that single-phase Cu2Te thin films can be obtained after annealing at 170 degrees C, and that annealing temperatures higher than 200 degrees C induce the Cu2Te coexisting phase. Subsequently, CdTe solar cells with a Cu2Te layer were fabricated and annealed at various temperatures. CdTe solar cells with a single-phase hexagonal Cu2Te layer annealed at a temperature of 180 degrees C show a good ohmic-contact behavior. (C) 2009 The Japan Society of Applied Physics

引用

页码：0855011 / 0855014

页数：4

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