A molecular beam study of the adsorption of tertiarybutylarsine (TBAs) on As-rich GaAs(001) surfaces

被引:5
|
作者
Cui, J
Ozeki, M
Ohashi, M
机构
[1] Ozeki Research Group, Angstrom Technology Partnership, c/o Natl. Inst. Adv. I., Tsukuba, Ibaraki 305
关键词
semiconductor surface; supersonic molecular beam; precursor-mediated adsorption; GaAs; TBAs; direct-inelastic scattering;
D O I
10.1016/S0169-4332(97)80175-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The scattering properties of tertiarybutylarsine (TBAs) on c(4X4) 2 X 4 GaAs(001) surfaces were studied by supersonic-molecular beam scattering. Polar angle measurement showed that the scattering signal was contributed from thermal desorption of trapped molecules combined with the direct-inelastic scattering. The sticking coefficient measurement revealed that the scattering behavior was very different for c(4 x 4) and 2 x 4 initial surface reconstructions. It is concluded that TBAs molecules can non-dissociatively chemisorb on c(4 x 4) through precursor-mediated mechanism, and physisorb on 2 x 4 surface. The desorption of TBAs molecule from the chemisorbed well was observed at higher temperatures above 400 K. The activation energies of the desorption (10.9 and 7.7 kcal/mol) are small reflecting that the TBAs molecular chemisorption wells are shallow.
引用
收藏
页码:739 / 745
页数:7
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