Muons and thermal neutrons SEU characterization of 28nm UTBB FD-SOI and Bulk eSRAMs

被引：0
|
作者：
Gasiot, Gilles [1 ]
Soussan, Dimitri [1 ]
Autran, Jean-Luc [2 ,3 ]
Malherbe, Victor [1 ]
Roche, Philippe [1 ]
机构：
[1] STMicroelectronics, Design Enablement Serv, Crolles, France
[2] Aix Marseille Univ, Marseille, France
[3] CNRS, IM2NP, UMR7334, Marseille, France
来源：
2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2015年
关键词：
Fully Depleted SOT Muons; UTBB; Soft Error Rate;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work reports the complete SEU experimental characterization in 28nm commercial UTBB FDSOI and Bulk technologies subjected to low-energy muons (mu+) and thermal neutrons. FDSOI technology demonstrates a 10x SER decrease for thermal neutrons and a more than 10x SEU occurrence reduction for muons with respect to Bulk technology, evidencing the beneficial role of the UT BB architecture on its radiation hardness level.
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页数：5
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