Laser Transfer Processing and the Integration of Ferroelectric Films

被引:5
|
作者
Chakraborty, Tanusri [1 ]
Xu, Baomin [4 ]
Zhang, Qi [3 ]
Bell, Andrew J. [2 ]
Bo, Xiao [2 ]
Chowdhury, Anirban [2 ]
James, Craig [2 ]
Puchmark, Chompoonuch [5 ]
Harrington, John [2 ]
Khan, Mikael [2 ]
Miles, Robert E. [1 ]
Xiong, Weizhen [2 ]
Milne, Steven J. [2 ]
机构
[1] Univ Leeds, Inst Microwaves & Photon, Leeds LS2 9JT, W Yorkshire, England
[2] Univ Leeds, Inst Mat Res, Leeds LS2 9JT, W Yorkshire, England
[3] Cranfield Univ, Adv Mat Grp, Cranfield MK43 0AL, Beds, England
[4] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[5] Naresuan Univ, Dept Phys, Phitsanulok 6500, Thailand
基金
英国工程与自然科学研究理事会;
关键词
laser transfer processing (LIP); lift off; BST; LBT; PZT; polymer substrates; semi-conductor substrates; TITANATE THIN-FILMS;
D O I
10.1080/10584580903213167
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin films of barium strontium titanate (BST), lanthanum modified bismuth titanate (LBT) and lead zirconate titanate (PZT) were fabricated by sol-gel methods onto sapphire substrates. They were transferred to a second substrate by using UV eximer laser radiation to delaminate the films from the fabrication substrate. Scanning electron microscopy revealed melting at the interfacial region of the LBT and PZT films, thus providing the delamination mechanism, but melting was not observed in the BST films. Only the PZT film, after laser transfer, retained its ferroelectric properties, with remnant polarisation of similar to 30 mu C/cm(2), and a high coercive field of 150 kV/cm.
引用
收藏
页码:40 / 48
页数:9
相关论文
共 50 条
  • [1] Device processing and integration of ferroelectric thin films for memory applications
    Achard, H
    Mace, H
    Peccoud, L
    MICROELECTRONIC ENGINEERING, 1995, 29 (1-4) : 19 - 28
  • [2] Combinatorial laser processing of dielectric/ferroelectric thin and thick films
    Das, RN
    Lew, C
    Zergioti, I
    Thompson, MO
    Giannelis, EP
    FERROELECTRIC THIN FILMS XI, 2003, 748 : 153 - 157
  • [3] Processing and characterization of ferroelectric thin films obtained by pulsed laser deposition
    Craciun, F
    Dinescu, M
    Verardi, P
    Scarisoreanu, N
    Moldovan, A
    Purice, A
    Galassi, C
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2005, 25 (12) : 2299 - 2303
  • [4] Laser-transfer processing of functional ceramic films
    James, C. W.
    Comyn, T.
    Dorey, R. A.
    Underhill, D.
    Milne, S. J.
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2010, 30 (02) : 419 - 422
  • [5] Laser transfer processing for the integration of thin and thick film ferroelectrics
    C. James
    T. Chakraborty
    A. Brown
    T. Comyn
    R. Dorey
    J. Harrington
    A. J. Laister
    R. E. Miles
    C. Puchmark
    B. Xu
    W. Xiong
    Q. Zhang
    S. J. Milne
    Journal of Materials Science, 2009, 44 : 5325 - 5331
  • [6] Laser transfer processing for the integration of thin and thick film ferroelectrics
    James, C.
    Chakraborty, T.
    Brown, A.
    Comyn, T.
    Dorey, R.
    Harrington, J.
    Laister, A. J.
    Miles, R. E.
    Puchmark, C.
    Xu, B.
    Xiong, W.
    Zhang, Q.
    Milne, S. J.
    JOURNAL OF MATERIALS SCIENCE, 2009, 44 (19) : 5325 - 5331
  • [7] INTELLIGENT PROCESSING OF FERROELECTRIC-FILMS
    HAERTLING, GH
    AMERICAN CERAMIC SOCIETY BULLETIN, 1994, 73 (08): : 68 - 73
  • [8] MOD processing of epitaxial ferroelectric films
    Hirano, SI
    INTEGRATED FERROELECTRICS, 1998, 20 (1-4) : 71 - 71
  • [9] Thin ferroelectric films: Preparation and prospects of integration
    Sigov, A. S.
    Mishina, E. D.
    Mukhortov, V. M.
    PHYSICS OF THE SOLID STATE, 2010, 52 (04) : 762 - 770
  • [10] Thin ferroelectric films: Preparation and prospects of integration
    A. S. Sigov
    E. D. Mishina
    V. M. Mukhortov
    Physics of the Solid State, 2010, 52 : 762 - 770