SHicon-based resonant-cavity-enhanced photodetectors

被引：0

作者：

Cheng, Buwen ^{[1
]}

Li, Chuanbo ^{[1
]}

Mao, Rongwei ^{[1
]}

Yao, Fei ^{[1
]}

Xue, Chunlai ^{[1
]}

Zhang, Jianguo ^{[1
]}

Shi, Wenhua ^{[1
]}

Zuo, Yuhua ^{[1
]}

Yu, Jinzhong ^{[1
]}

Wang, Qiming ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China

来源：

2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | 2006年

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Silicon-based resonant-cavity-enhanced photodetectors (RCE-PD) with Si, Ge islands and InGaAs as absorption materials were introduced, respectively. The Ge islands and Si RCE-PD had a membrane structure and the Si-based InGaAs RCE-PDs were fabricated by bonding technology.

引用

页码：182 / +

页数：2

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