Ion beam synthesis of graphite and diamond in silicon carbide

被引：21
|
作者：
Heera, V [1 ]
Skorupa, W
Pécz, B
Dobos, L
机构：
[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany
[2] Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期
关键词：
D O I：
10.1063/1.126493
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high dose of 1x10(18) cm(-2), 60 keV carbon ions was implanted into single crystalline 6H silicon carbide (SiC) at elevated temperatures. The formation of carbon phases in the crystalline SiC lattice was investigated by cross sectional transmission electron microscopy. An amorphous, carbon rich phase was produced at 300 degrees C. Precipitates of graphite were obtained at 600 degrees C, whereas at 900 degrees C small diamond grains were produced. These grains are in perfect epitaxial relation with the surrounding SiC lattice. (C) 2000 American Institute of Physics. [S0003-6951(00)02820-5].
引用
收藏
页码：2847 / 2849
页数：3
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