Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory

被引：4

作者：

Nagami, Tasuku ^{[1
]}

Tsuchiya, Yoshishige ^{[2
,6
]}

Saito, Shinichi ^{[3
,6
]}

Arai, Tadashi ^{[3
,6
]}

Shimada, Toshikazu ^{[4
,6
]}

Mizuta, Hiroshi ^{[2
,5
,6
]}

Oda, Shunri ^{[1
,5
,6
]}

机构：

[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

[2] Univ Southampton, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England

[3] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

[4] Quantum 14 Co Ltd, Koganei, Tokyo 1848588, Japan

[5] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[6] Japan Sci & Technol Agcy, Solut Oriented Res Sci & Technol Program, Kawaguchi, Saitama 3320012, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 11期

关键词：

NANOCRYSTALLINE SILICON; BISTABLE MEMS; FABRICATION;

D O I：

10.1143/JJAP.48.114502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The static switching properties and readout characteristics of proposed high-speed and nonvolatile nanoelectromechanical (NEM) memory devices are investigated By conducting a three-dimensional finite element mechanical simulation combined with an electrostatic analysis, we analyze the electromechanical switching operation of a mechanically bistable NEM floating gate by applying gate voltage. We show that switching voltage can be reduced to less than 10V by reducing the zero-bias displacement of the floating gate and optimizing the cavity structure to improve mechanical symmetry. We also analyze the electrical readout property of the NEM memory devices by combining the electromechanical simulation with a drift-diffusion analysis We demonstrate that the mechanically bistable states of the floating gate can be detected via the changes in drain current with an ON/OFF current ratio of about 3 x 10 (C) 2009 The Japan Society of Applied Physics

引用

页数：5

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