Reaction Rate Constants of CH4(ads) (sic) CH3(ads) + H(ads) on Ni(111): The Effect of Lattice Motion

Methane dissociation on metal surfaces is of great commercial importance. The dissociation and recombination rate constants of CH4 on Ni(111) are calculated using the quantum instanton approach with the path integral Monte Carlo method. The Ni(111) lattice is treated rigidly, classically, and quantum mechanically to reveal the effects of lattice motion and quantum tunneling. For the dissociation of CH4, the rates have the smallest value on the rigid lattice, while they possess the largest value on the quantum lattice. For instance, at 300 K, the rates on the classical and quantum lattices are and 12 times larger than that on the rigid lattice, respectively. The curve of the Arrhenius plot for the dissociation rates on the rigid lattice demonstrates that the quantum tunneling effect of the ruptured H atom is remarkable, while the nearly invariable dissociation rates at low temperatures on the quantum lattice confirm that the thermally assisted tunneling should be dominant at low temperatures. For the recombination of CH4, the quantum lattice still has rates that are much larger than that of the rigid lattice. For instance, the ratio of the recombination rates on the quantum and rigid lattices is 12 at 300 K. The quantum tunneling effect seems to play a minor role in the recombination rates on the rigid lattice; however, the thermally assisted tunneling is still very significant for the recombination process.