Damp-heat induced sulfate formation in Cu(In,Ga)(S,Se)2-based thin film solar cells

被引：27

作者：

Heske, C ^{[1
]}

Groh, U

Weinhardt, L

Fuchs, O

Holder, B

Umbach, E

Bostedt, C

Terminello, LJ

Zweigart, S

Niesen, TP

Karg, F

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

[2] Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

[3] Shell Solar GmbH, D-81739 Munich, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 24期

关键词：

D O I：

10.1063/1.1525884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To investigate the impact of damp heat treatments on the electronic and chemical structure of Cu(In,Ga)(S,Se)(2)-based thin film solar cells, we have performed a detailed soft x-ray emission study of the ZnO/CuIn(S,Se)(2) and ZnO/CdS/CuIn(S,Se)(2) interfaces. By comparing the sulfur L-2,L-3 emission spectra of pristine and damp-heat treated samples, we find a sulfate formation at the ZnO/CuIn(S,Se)(2) and the ZnO/CdS interface. The intensity behavior as a function of ZnO film thickness further reveals a diffusion of sulfur atoms into the ZnO film, leading to the formation of zinc sulfate in the ZnO window layer of damp-heat-treated Cu(In,Ga)(S,Se)(2)-based solar cells. (C) 2002 American Institute of Physics.

引用

页码：4550 / 4552

页数：3

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