Stacking-dependent excitonic properties of bilayer blue phosphorene

被引:24
|
作者
Iyikanat, F. [1 ]
Torun, E. [2 ]
Senger, R. T. [1 ,3 ]
Sahin, H. [3 ,4 ]
机构
[1] Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey
[2] Univ Luxembourg, Phys & Mat Sci Res Unit, 162a Ave Faiencerie, L-1511 Luxembourg, Luxembourg
[3] Izmir Inst Technol, ICTP ECAR Eurasian Ctr Adv Res, TR-35430 Izmir, Turkey
[4] Izmir Inst Technol, Dept Photon, TR-35430 Izmir, Turkey
关键词
EXCITATIONS; ABSORPTION; BANDGAP;
D O I
10.1103/PhysRevB.100.125423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ab initio calculations in the framework of many-body perturbation theory (MBPT) are performed to calculate the electronic and optical properties of monolayer and bilayer blue phosphorene with different stacking configurations. It is found that the stacking configuration of bilayer blue phosphorene strongly affects the electronic band gap of the material. By solving the Bethe-Salpeter equation (BSE) on top of the G(0)W(0) calculation, the binding energies, spectral positions, and band decomposition of excitons of monolayer and bilayer configurations are investigated. The most prominent two excitonic peaks of bilayers are examined in detail. Our calculations show that different stacking configurations lead to distinct interlayer interaction characteristics which lead to substantial change in the optical spectrum of bilayer blue phosphorene. Mostly intralayer and mixed interlayer excitons with quite high binding energies are obtained in bilayer blue phosphorene. Our results show that excitonic properties of ultrathin materials play an important role in tuning and improving the optoelectronic performance of two-dimensional materials.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Stacking-dependent optical properties in bilayer WSe2
    McCreary, Kathleen M.
    Phillips, Madeleine
    Chuang, Hsun-Jen
    Wickramaratne, Darshana
    Rosenberger, Matthew
    Hellberg, C. Stephen
    Jonker, Berend T.
    NANOSCALE, 2021, 14 (01) : 147 - 156
  • [2] Stacking-dependent electronic structure of bilayer silicene
    Fu, Huixia
    Zhang, Jin
    Ding, Zijing
    Li, Hui
    Meng, Sheng
    APPLIED PHYSICS LETTERS, 2014, 104 (13)
  • [3] Stacking-Dependent Optical Conductivity of Bilayer Graphene
    Wang, Yingying
    Ni, Zhenhua
    Liu, Lei
    Liu, Yanhong
    Cong, Chunxiao
    Yu, Ting
    Wang, Xiaojun
    Shen, Dezhen
    Shen, Zexiang
    ACS NANO, 2010, 4 (07) : 4074 - 4080
  • [4] Stacking-Dependent Magnetism in Bilayer CrI3
    Sivadas, Nikhil
    Okamoto, Satoshi
    Xu, Xiaodong
    Fennie, Craig J.
    Xiao, Di
    NANO LETTERS, 2018, 18 (12) : 7658 - 7664
  • [5] Stacking-dependent ferroicity of a reversed bilayer: Altermagnetism or ferroelectricity
    Sun, Wencong
    Ye, Haoshen
    Liang, Li
    Ding, Ning
    Dong, Shuai
    Wang, Shan-Shan
    PHYSICAL REVIEW B, 2024, 110 (22)
  • [6] Stacking-dependent topological magnons in bilayer CrI3
    Soenen, Maarten
    Bacaksiz, Cihan
    Menezes, Rai M.
    Milosevic, Milorad, V
    PHYSICAL REVIEW MATERIALS, 2023, 7 (02)
  • [7] Stacking-dependent magnetoelectronic properties in multilayer graphene
    Lin, Chiun-Yan
    Wu, Jhao-Ying
    Chiu, Yu-Huang
    Chang, Cheng-Pong
    Lin, Ming-Fa
    PHYSICAL REVIEW B, 2014, 90 (20)
  • [8] Stacking-dependent anomalous valley Hall effect in bilayer Janus VSCl
    Zhang, Rui-Chuan
    Chen, Hai -Yuan
    PHYSICAL REVIEW B, 2023, 108 (07)
  • [9] Nucleation and growth of stacking-dependent nanopores in bilayer h-BN
    Xu, Tao
    Tu, Yizhi
    Zhu, Yatong
    Shen, Yuting
    Yin, Kuibo
    Sun, Litao
    NANOSCALE, 2022, 14 (46) : 17182 - 17187
  • [10] Stacking-dependent superstructures at stepped armchair interfaces of bilayer/trilayer graphene
    Kazemi, Asieh S.
    Crampin, Simon
    Ilie, Adelina
    APPLIED PHYSICS LETTERS, 2013, 102 (16)