Reliability challenges for deep submicron interconnects

被引:8
|
作者
McPherson, JW
Le, HA
Graas, CD
机构
[1] M/S 385, Texas Instruments, Inc., 13353 Floyd Road, Dallas
关键词
D O I
10.1016/S0026-2714(97)00089-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Deep submicron interconnects (leads, contacts and vias) are rapidly becoming one of the major reliability challenges as ULSI devices continue to be scaled. With 0.5um feature sizes now common, trying to balance reliability and performance requirements is increasing difficult as we move toward < 0.25um. By the end of the decade, current density in metal leads will be > 0.5 Ma/cm2 and single 0.20-0.25um contacts and vias will be required to safely carry 1-2ma of current. This increases electromigration concerns, with vias generally now being the weakest link in a reliable ULSI multilevel-metal system. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码:1469 / 1477
页数:9
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