Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures

The consequences of applying (Nanographite-PVP) interlayer on surface-states (N-ss), series-resistance (R-s), and polarization effects on the real and imaginary parts of the complex dielectric constant (epsilon* = epsilon '-j epsilon ''), loss-tangent {tan delta(= epsilon ''/epsilon ')}, electrical-conductivity (sigma), and complex electric-modulus (M* = M ' + jM '') have been investigated in wide range frequency (1 kHz/5 MHz) and voltage (-1 V/2 V) to get more information on them. Additionally, both the frequency-dependent profile of R-s and complex-impedance (Z* = Z '-jZ '') were extracted by using the epsilon ' and epsilon '' values. Whereas the epsilon ' and epsilon '' decline with incline frequency, but incline with positive applied voltage owing to restructure and reorganized of the charges at N-ss, and polarization effect under electric field. While the increment in conductivity at high-frequencies was predicated on the increment in charge mobility, the increment in epsilon ' and epsilon '' at low-frequencies was attributed to increment in mobility of these charges. Hopping-carries from one traps to the other was also leads to an increment in the conductivity at high-frequencies. The observed peak characteristics in M '' and tan delta versus V and frequency plots was attributed to relaxation-time and spatial distribution of N-ss located at interlayer/n-Si interface, interfacial/dipole polarization. High-dielectric value (6.5) shows that this organic interlayer may be good alternative to the conventional insulators which can be more charges/energy storage.