A 763 pW 230 pJ/Conversion Fully Integrated CMOS Temperature-to-Digital Converter With+0.81 °C/-0.75 °C Inaccuracy

被引：37

作者：

Wang, Hui ^{[1
,2
]}

Mercier, Patrick P. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2019年 / 54卷 / 08期

关键词：

Capacitive charging time; complementary metal-oxide-semiconductor (CMOS) temperature sensor; fully integrated; Internet of Things (IoT); sub-nW power; temperature sensor; ultra-low-power; SENSOR; 3-SIGMA; SYSTEM; NW;

D O I：

10.1109/JSSC.2019.2916418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A sub-nW fully integrated temperature sensor is presented that digitizes temperature via a capacitive charging time feedback loop controlled by a least significant bit (LSB)-first algorithm. Specifically, an ultra-low-power current reference generator charges two metal-insulator-metal (MIM) capacitors Ctop and Cbot, generating Vramp, top and Vramp, bot which are then compared to a constant with temperature (CWT) voltage and a proportional to absolute temperature (PTAT) voltage, respectively. Temperature is then digitized by matching the charging time between the Vramp, top and Vramp, bot via feedback tuning of Ctop driven by an energy-efficient digital processing unit (DPU) for direct ultra-low-power digital readout. The design is fabricated in 65 nm complementary metal-oxide-semiconductor, and measurement from 12 samples reveals a maximum temperature error of +1.61 degrees C/-1.53 degrees C (+ 0.86 degrees C/-0.83 degrees C) and + 0.81 degrees C/-0.75 degrees C when operating from 0 degrees C to 100 degrees C after two-point (three-point) calibration without and with trimming, respectively. Operating from a 0.5 V supply, the 12 samples consumed an average power of 763 pW at 20 degrees C, which after a 0.3 s conversion time results in 230 pJ/conversion.

引用

页码：2281 / 2290

页数：10

共 7 条

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Shao, Cheng-Ze
Liao, Yu-Te
2020 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2020,
[2] A BJT-Based Temperature-to-Digital Converter With ±60 mK (3σ) Inaccuracy From-55 °C to+125 °C in 0.16-μm CMOS
Yousefzadeh, Bahman
Shalmany, Saleh Heidary
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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (04) : 1044 - 1052
[3] A BJT-based Temperature-to-Digital Converter with ±60mK (3σ) Inaccuracy from-70°C to 125°C in 160nm CMOS
Yousefzadeh, Bahman
Shalmany, Saleh Heidary
Makinwa, Kofi
2016 IEEE SYMPOSIUM ON VLSI CIRCUITS (VLSI-CIRCUITS), 2016,
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Kumar, Rushil K.
Jiang, Hui
Makinwa, Kofi A. A.
2019 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2019, : 107 - 108
[5] A BJT-Based Temperature-to-Digital Converter With a 0.25 C 3 $\sigma$ -Inaccuracy From-40 C to 180 C Using Heater-Assisted Voltage Calibration
Yousefzadeh, Bahman
Makinwa, Kofi A. A.
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2020, 55 (02) : 369 - 377
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Truesdell, Daniel S.
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2019 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2019,
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Yucetas, Mikail
Pulkkinen, Mika
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