Ab initio study of the β-tin→Imma→sh phase transitions in silicon and germanium -: art. no. 134112

被引:19
作者
Gaál-Nagy, K [1 ]
Pavone, P [1 ]
Strauch, D [1 ]
机构
[1] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
关键词
D O I
10.1103/PhysRevB.69.134112
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the structural sequence of the high-pressure phases of silicon and germanium. We have focussed on the cd -->beta-tin --> Imma --> sh phase transitions. We have used the plane-wave pseudopotential approach to the density-functional theory implemented within the Vienna ab initio simulation package. We have determined the equilibrium properties of each structure and the values of the critical parameters including a hysteresis effect at the phase transitions. The order of the phase transitions has been obtained from the pressure dependence of the enthalpy and of the structure parameters. The commonly used tangent construction is shown to be very unreliable in this case. Our calculations identify a first-order phase transition from the cd to the beta-tin and from the Imma to the sh phase, and they indicate the possibility of a second-order phase-transition from the beta-tin to the Imma phase. Finally, we have derived the enthalpy barriers between the phases.
引用
收藏
页码:134112 / 1
页数:11
相关论文
共 55 条
[1]   MEASUREMENT OF THE SILICON (220) LATTICE SPACING [J].
BASILE, G ;
BERGAMIN, A ;
CAVAGNERO, G ;
MANA, G ;
VITTONE, E ;
ZOSI, G .
PHYSICAL REVIEW LETTERS, 1994, 72 (20) :3133-3136
[2]   X-RAY-DIFFRACTION FROM HIGH-PRESSURE GE USING SYNCHROTRON RADIATION [J].
BAUBLITZ, M ;
RUOFF, AL .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5669-5671
[3]  
Bergamin A, 1999, EUR PHYS J B, V9, P225, DOI 10.1007/s100510050760
[4]   SECOND-ORDER PHASE TRANSITIONS CHARACTERIZED BY A DEFORMATION OF UNIT CELL [J].
BOCCARA, N .
ANNALS OF PHYSICS, 1968, 47 (01) :40-&
[5]   SELF-CONSISTENT CALCULATIONS OF THE ENERGY-BANDS AND BONDING PROPERTIES OF B-12(C-3) [J].
BYLANDER, DM ;
KLEINMAN, L ;
LEE, S .
PHYSICAL REVIEW B, 1990, 42 (02) :1394-1403
[6]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[7]  
Christensen NE, 1999, PHYS STATUS SOLIDI B, V211, P5, DOI 10.1002/(SICI)1521-3951(199901)211:1<5::AID-PSSB5>3.0.CO
[8]  
2-N
[10]   EXPERIMENTAL-STUDY OF THE CRYSTAL STABILITY AND EQUATION OF STATE OF SI TO 248 GPA [J].
DUCLOS, SJ ;
VOHRA, YK ;
RUOFF, AL .
PHYSICAL REVIEW B, 1990, 41 (17) :12021-12028