The upper limits of useful n- and p-type doping in GaAs and AlAs

被引：12
|
作者：
Newman, RC [1 ]
机构：
[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Interdisciplinary Res Ctr Semicond Mat, London SW7 2BZ, England
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 66卷 / 1-3期
基金：
英国工程与自然科学研究理事会;
关键词：
GaAs; Si dopant; C dopant; AlAs;
D O I：
10.1016/S0921-5107(99)00117-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The maximum carrier concentration found for GaAs:Si is n(max) similar to 2 x 10(19) cm(-3), limited by the amphoteric behaviour of the Si impurities, the generation of gallium vacancies and Si precipitation. After annealing, a more typical concentration is 4 -5 x 10(18) cm(-3). GaAs:C doped to a level greater than p(max) similar to 10(19) cm(-3) is unstable during post-growth heat treatments, with the formation of C-C dimers that are deep donors. This process also occurs in. AIAs, but p(max) has not been determined. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：39 / 45
页数：7
相关论文
共 50 条
  • [1] Upper limits of useful n- and p-type doping in GaAs and AlAs
    Interdisc. Res. Ctr. for S.M., Blackett Laboratory, Imp. Coll. of Sci., Technol./Med., Prince Consort Road, London SW7 2BZ, United Kingdom
    Mater Sci Eng B Solid State Adv Technol, 1 (39-45):
  • [2] N- and p-type doping of antimonene
    Xie, Meiqiu
    Zhang, Shengli
    Cai, Bo
    Zou, Yousheng
    Zeng, Haibo
    RSC ADVANCES, 2016, 6 (18) : 14620 - 14625
  • [3] N- and P-type doping of diamonds: A review
    Sultana, Maria
    Karmakar, Subrata
    Haque, Ariful
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 186
  • [4] n- and p-type doping of cubic GaN
    As, DJ
    DEFECTS AND DIFFUSION IN CERAMICS: AN ANNUAL RETROSPECTIVE IV, 2002, 206-2 : 87 - 102
  • [5] RECOMBINATION RADIATION IN N- AND P-TYPE EPITAXIAL GAAS
    BOGARDUS, H
    BEBB, HB
    REYNOLDS, RA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (03): : 497 - &
  • [6] P-type doping of GaAs nanowires
    Stichtenoth, D.
    Wegener, K.
    Gutsche, C.
    Regolin, I.
    Tegude, F. J.
    Prost, W.
    Seibt, M.
    Ronning, C.
    APPLIED PHYSICS LETTERS, 2008, 92 (16)
  • [7] The effect of n- and p-type doping on coherent phonons in GaN
    Ishioka, Kunie
    Kato, Keiko
    Ohashi, Naoki
    Haneda, Hajime
    Kitajima, Masahiro
    Petek, Hrvoje
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 25 (20)
  • [8] Growth of n- and p-type ZnTe semiconductors by intrinsic doping
    Olusola, Olajide Ibukun-Olu
    Madugu, Mohammad Lamido
    Dharmadasa, Imyhamy Mudiy
    Energy Materials: Materials Science and Engineering for Energy Systems, 2015, 10 (04): : 497 - 502
  • [9] N-TYPE AND P-TYPE DOPING IN ATOMIC LAYER EPITAXY OF GAAS
    TAKANOHASHI, T
    MOCHIZUKI, K
    OZEKI, M
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 39 - 44
  • [10] P-type AlAs/[GaAs/AlAs] Semiconductor/Superlattice DBR Grown by MBE
    YAN Chang-ling 1
    2. Changchun Institute of Optics and Fine Mechanics
    SemiconductorPhotonicsandTechnology, 2001, (01) : 8 - 12
12345