Microdose and Breakdown Effects Induced by Heavy Ions on Sub 32-nm Triple-Gate SOI FETs

被引：18

作者：

Griffoni, Alessio ^{[1
]}

Gerardin, Simone ^{[1
,2
]}

Meneghesso, Gaudenzio ^{[1
]}

Paccagnella, Alessandro ^{[1
,2
]}

Simoen, Eddy ^{[3
]}

Put, Sofie ^{[3
,4
,5
]}

Claeys, Cor ^{[3
,4
]}

机构：

[1] Univ Padua, RREACT Grp, Dipartimento Ingn Informaz, I-35131 Padua, Italy

[2] Ist Nazl Fis Nucl, I-35131 Padua, Italy

[3] IMEC, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[5] CEN SCK, B-2400 Mol, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

关键词：

Breakdown; heavy ions; microdose; multigate device (MuGFET); triple-gate SOI FETs;

D O I：

10.1109/TNS.2008.2007234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices. We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Mriple-Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors.

引用

页码：3182 / 3188

页数：7