Self-aligned organic field-effect transistors using back-surface exposure method

被引：26

作者：

Hyodo, T ^{[1
]}

Morita, F ^{[1
]}

Naka, S ^{[1
]}

Okada, H ^{[1
]}

Onnagawa, H ^{[1
]}

机构：

[1] Toyama Univ, Fac Engn, Toyama 9308555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 4B期

关键词：

organic FET; pentacene; self-alignment;

D O I：

10.1143/JJAP.43.2323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-aligned organic field-effect transistors using the back-surface exposure method were investigated. Using the back-surface exposure method. source and drain electrodes were self-aligned to the gate electrode. The overlapping length of the gate-source and the gate-drain electrodes was as small as 0.8 mum. Excellent field-effect operation was obtained with small parasitic resistance, where the maximum field-effect mobility was 0.12 cm(2)/Vs. The on-off ratio was 10(4), threshold voltage was -1.0 V, mutual conductance was 1.8 mS and subthreshold slope was 0.5 V/decade. Combined with capacitance measurement, the estimated cutoff frequency was 0.18 MHz.

引用

页码：2323 / 2325

页数：3

共 50 条

[1] All-Organic Self-Aligned Field-Effect Transistors
Muramoto, Tatsunori
Naka, Shigeki
Okada, Hiroyuki
IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1, 2012, 19 : 787 - 788
[2] Graphene field-effect transistors with self-aligned gates
Farmer, Damon B.
Lin, Yu-Ming
Avouris, Phaedon
APPLIED PHYSICS LETTERS, 2010, 97 (01)
[3] GALLIUM ARSENIDE SELF-ALIGNED GATE FIELD-EFFECT TRANSISTORS
DRIVER, MC
KIM, HB
BARRETT, DL
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08): : 1244 - &
[4] Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors
Zajaczkowska, Hanna
Veith, Lothar
Waliszewski, Witold
Bartkiewicz, Malgorzata A.
Borkowski, Michal
Sleczkowski, Piotr
Ulanski, Jacek
Graczykowski, Bartlomiej
Blom, Paul W. M.
Pisula, Wojciech
Marszalek, Tomasz
ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (49) : 59012 - 59022
[5] Self-aligned, vertical-channel, polymer field-effect transistors
Stutzmann, N
Friend, RH
Sirringhaus, H
SCIENCE, 2003, 299 (5614) : 1881 - 1884
[6] Fully Self-Aligned Oxide-Semiconductor Field-Effect Transistors
Nomura, Kuniaki
Sakoh, Masahiro
Okada, Hiroyuki
Naka, Shigeki
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2009, 22 (04) : 507 - 510
[7] Frequency Characteristics of Solution-Processed Organic Field-Effect Transistors with Self-Aligned Electrodes
Nagase, Takashi
Hatta, Hideyuki
Miyagawa, Yuhi
Kobayashi, Takashi
Murakami, Shuichi
Watanabe, Mitsuru
Matsukawa, Kimihiro
Naito, Hiroyoshi
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3, 2010, : 739 - 742
[8] Effects of the plasma process for self-aligned nanocarbon field-effect transistors
Kawahara, Toshio
Rupesh, Singh Kumar
Matsumoto, Kazuhiko
Ohno, Yasuhide
Okamoto, Kazumasa
Maehashi, Kenzo
Utsunomiya, Risa
Matsuba, Teruaki
2017 INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2017,
[9] Self-Aligned Organic Metal–Semiconductor Field-Effect Transistor
Yi-Chen Lo
Xing Cheng
Journal of Electronic Materials, 2023, 52 : 1323 - 1330
[10] Self-aligned organic field-effect transistors on plastic with picofarad overlap capacitances and megahertz operating frequencies
Higgins, S. G.
Muir, B. V. O.
Dell'Erba, G.
Perinot, A.
Caironi, M.
Campbell, A. J.
APPLIED PHYSICS LETTERS, 2016, 108 (02)

← 1 2 3 4 5 →