Influence of ambient on conductivity and 1/f noise in Si nanowire arrays

被引：0

作者：

Fobelets, K. ^{[1
]}

Ahmad, M. M. ^{[1
]}

Roumyantsev, S. ^{[2
]}

Shur, M. ^{[2
]}

机构：

[1] Imperial Coll London, Dept Elect & Elect Engn, London, England

[2] RPI, Ctr Integrated Elect, Troy, NY USA

来源：

2013 22ND INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2013年

关键词：

Si nanowire; conductivity; low frequency noise; SILICON NANOWIRES; TRANSISTORS; TRANSPORT; GRAPHENE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conductivity and low frequency noise of nand p-type Si nanowire arrays are measured in humid and dry environments. It was found that the conductivity increases for both n- and p-type arrays in a humid environment. The low frequency noise characteristics indicate a change in the carrier transport process from noise governed by trapping processes at the interface in a humid environment to noise governed by inhomogeneity in the Schottky barrier contacts in a dry environment.

引用

页数：4

共 50 条

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