The charge neutrality level and the fermi level pinning in A3N (BN, AlN, GaN, InN) nitrides

被引：20

作者：

Brudnyi, V. N. ^{[1
]}

Kosobutsky, A. V. ^{[2
]}

Kolin, N. G. ^{[3
]}

机构：

[1] Tomsk VV Kuibyshev State Univ, Tomsk 634050, Russia

[2] Kemerovo State Univ, Kemerovo 650043, Russia

[3] LY Karpov Phys Chem Res Inst, Obninsk Branch Fed State Unitary Enterprise, Obninsk, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2008年 / 51卷 / 12期

关键词：

nitrides; chemical potential; band structure; radiation defects;

D O I：

10.1007/s11182-009-9176-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The electronic band structure and position of the charge neutrality level (CNL) in BN, AlN, GaN, and InN compounds with cubic and hexagonal lattices are calculated within the density functional theory (DFT-GGA). It is shown that the charge neutrality level is shifted from the middle of the BN and AlN forbidden band to the upper half of the GaN forbidden band and to the allowed energy region in the InN conduction band as the cation atomic weight increases. This determines semiinsulating properties of BN and AlN, n-type conductivity of GaN, and n (+)-type conductivity of InN upon saturation of these materials by intrinsic lattice defects due to hard radiation.

引用

页码：1270 / 1278

页数：9

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