Low temperature specific heat of GaP, InP, GaAs and InAs compounds

被引:13
|
作者
Yamaguchi, K
Chiba, Y
Yoshizawa, M
Kameda, K
机构
[1] Dept. of Mat. Science and Technology, Faculty of Engineering, Iwate University, Morioka
关键词
III-V compound semiconductor; GaP; InP; GaAs; InAs; specific heat; Debye temperature; standard entropy; adiabatic calorimeter;
D O I
10.2320/jinstmet1952.60.12_1181
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Low temperature specific heats of the GaP, InP, GaAs and InAs compounds were measured over the temperature range 4.5 to 298.15 K using an adiabatic calorimeter. The Debye temperatures were derived from the obtained specific heat data. The curves of Debye temperature as a function of temperature for the GaP, InP, GaAs and InAs compounds exhibit a minimum in the temperature range of 15 similar to 30 K and a maximum at somewhat higher temparatures (approximately 130 similar to 180 K). The standard entropies of the GaP, InP, GaAs and InAs compounds determined from the specific heat data were 50.5, 62.1, 64.1 and 75.5 J/(mol . K), respectively. A relation was found between the standard entropy and the cohesive energy. The standard entropies of the III-V compounds decreased linearly with increasing cohesive energy per bond.
引用
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页码:1181 / 1186
页数:6
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