Thermally stable NiSi2 for Ge contact with Schottky barrier height modulation capability

被引：0

作者：

Yoshihara, R. ^{[1
]}

Tamura, Y. ^{[1
]}

Kakushima, K. ^{[2
]}

Ahmet, P. ^{[1
]}

Kataoka, Y. ^{[2
]}

Nishiyama, A. ^{[2
]}

Sugii, N. ^{[2
]}

Tsutsui, K. ^{[2
]}

Natori, K. ^{[1
]}

Hattori, T. ^{[1
]}

Iwai, H. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268502, Japan

[2] Tokyo Inst Technol, Dept Elect & Appl Phys, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

关键词：

D O I：

10.1149/05009.0217ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Agglomeration resistant contact of NiSi2 with Ge substrates has been performed using stacked silicidation process. Stable Schottky barrier height at NiSi2/Ge interface with ideality factor of less than 1.2 can be maintained up to annealing temperature of 500 degrees C. Incorporation of P atom at NiSi2/Ge interface modulates the Schottky barrier height to produce Ohmic contact.

引用

页码：217 / 221

页数：5

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