Effects of megasonics coupled with SC-1 process parameters on particle removal on 300-mm silicon wafers

被引：0

作者：

Wicks, SL ^{[1
]}

Lucey, MS ^{[1
]}

Rosato, JJ ^{[1
]}

机构：

[1] SCP Global Technol, Boise, ID 83704 USA

来源：

PARTICLES ON SURFACES 8: DETECTION, ADHESION AND REMOVAL | 2003年

关键词：

particle removal; megasonics; SC-1; silicon wafer;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of megasonic use, bath temperature and NH4OH:H2O2:H2O ratio were studied to determine an effective means of particle removal from a bare 300-mm silicon wafer. This is one of the first studies in 300-mm-process development on particle removal in which two types of megasonics were used: a divergent lens megasonic and a focused beam megasonic. Experimental results show overall removal efficiencies greater than 98% of predeposited nitride particles for both megasonics when coupled with optimized temperature and chemistry. The particle removal efficiencies per bin size were analyzed for the deposited particles and were found to be greater than 90%.

引用

页码：315 / 322

页数：8

共 3 条

[1] Proximity gettering process for 300-mm silicon wafers
Lee, GS
Park, JG
JOURNAL OF CERAMIC PROCESSING RESEARCH, 2004, 5 (03): : 251 - 255
[2] Aggressive SC-1 particle removal techniques in a spray processor and their effects on other metrics
Smith, SM
Christenson, KK
CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING V, 1998, 35 : 544 - 551
[3] Low-loss and flatband silicon-nanowire-based 5th-order coupled resonator optical waveguides (CROW) fabricated by ArF-immersion lithography process on a 300-mm SOI wafer
Jeong, Seok-Hwan
Shimura, Daisuke
Simoyama, Takasi
Seki, Miyoshi
Yokoyama, Nobuyuki
Ohtsuka, Minoru
Koshino, Keiji
Horikawa, Tsuyoshi
Tanaka, Yu
Morito, Ken
SILICON PHOTONICS IX, 2014, 8990

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