Surface modification of 6H SiC by laser direct-write

被引:0
|
作者
Plew, TY [1 ]
Leong, KH [1 ]
Redwing, JM [1 ]
机构
[1] Penn State Univ, Appl Res Lab, Electro Opt Ctr, Kittanning, PA 16201 USA
来源
20TH ICALEO 2001, VOLS 92 & 93, CONGRESS PROCEEDINGS | 2001年
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of using the laser direct-write technique to achieve resistive lines on 6H SiC was investigated. A large range of fluences was explored to determine how the laser beam affects the SiC surface during the modification process. The Focused Ion Beam (FIB) mill lift-out technique was used to obtain cross-sections of the laser written lines, and Scanning Transmission Electron Microscopy (STEM) with Energy Dispersive Spectroscopy (EDS) was used to examine the near surface microstructure after laser transformation. These techniques gave insight into the material transformation affecting the electrical resistance.
引用
收藏
页码:1771 / 1779
页数:9
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