Chromium Mask for Plasma-Chemical Etching of Al xGa1-x N layers

被引：1

作者：

Protasov, D. Yu. ^{[1
]}

Vitsina, N. R. ^{[1
]}

Valisheva, N. A. ^{[1
]}

Dul'tsev, F. N. ^{[1
]}

Malin, T. V. ^{[1
]}

Zhuravlev, K. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk 633090, Russia

来源：

TECHNICAL PHYSICS | 2014年 / 59卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

Etch Rate; AuCl; Scanning Electron Micro; Chromium Layer; Etch Depth;

D O I：

10.1134/S1063784214090242

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of the mask material used for formation of GaN mesa-structures using plasma-chemical etching in a BCl3 : Ar : N-2 atmosphere is studied. It is shown that a bilayer SiO2/Cr mask in which the thickness of the chromium layer is six to seven times smaller than a desired etch depth provides effective protection of the surface and allows the formation of structures with a flat surface for an etch depth of up to 2.5 mu m. When the mask is produced by conventional lithography, the slope of the side walls is no more than 10A degrees and decreases when liftoff lithography is applied.

引用

页码：1356 / 1359

页数：4

共 31 条

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D. Yu. Protasov
N. R. Vitsina
N. A. Valisheva
F. N. Dul’tsev
T. V. Malin
K. S. Zhuravlev
Technical Physics, 2014, 59 : 1356 - 1359
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[10] A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF
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