Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations

被引：8
|
作者：
Saeki, Akinori [1 ,2 ]
Kozawa, Takahiro [1 ,2 ]
Tagawa, Seiichi [1 ,2 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[2] Osaka Univ, Japan Sci & Technol Agcy, CREST, Osaka 5670047, Japan
来源：
APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 07期
关键词：
X-RAY-LITHOGRAPHY; EUV LITHOGRAPHY; ELECTRON-BEAM; POSITIVE-TONE; ACID-DIFFUSION; PHOTORESISTS; POLYMERS;
D O I：
10.1143/APEX.2.075006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The simultaneous achievement of high resolution and low line width (edge) roughness (LWR, LER) at acceptable sensitivity (RLS) in chemically-amplified resist (CAR) is in strong demand to realize the mass production of ultra-small electric circuit using extreme ultraviolet. We performed Monte Carlo and dissolution simulations of positive-tone CAR of electron beam lithography to clarify this RLS formation. The trade-off RLS relationship was successfully reproduced and discussed in terms of non-scaling law of exposed line width. It was demonstrated that LER follows the inverse of square root of exposure dose at moderate acid diffusion length. (C) 2009 The Japan Society of Applied Physics
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页数：3
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