Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors

被引：6
|
作者：
Mounkachi, O. [1 ]
Benyoussef, A. [1 ,3 ,4 ]
El Kenz, A. [1 ]
Saidi, E. H. [2 ,3 ,4 ]
机构：
[1] Fac Sci Rabat, Dept Phys, Lab Magnetisme & Phys Hautes Energies, Rabat, Morocco
[2] Fac Sci Rabat, Dept Phys, Lab Phys Hautes Energies, Rabat, Morocco
[3] Hassan II Acad Sci & Technol, Rabat, Morocco
[4] INANOTECH, Inst Nanotechnol, Rabat, Morocco
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2009年 / 321卷 / 16期
关键词：
First-principle calculations; Diluted magnetic semiconductors; Acceptor defect; p-type; (Ga; Fe)N; n-type; FERROMAGNETISM; GAN;
D O I：
10.1016/j.jmmm.2009.02.140
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa- Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga,Fe)N and p-type (Ga, Fe)N is investigated. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：2402 / 2406
页数：5
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