Establishing MOVPE growth of InAs/GaAs quantum dots in a commercial 8x3'' multiwafer reactor for optoelectronic applications

被引：0
|
作者：
Drouot, V [1 ]
Beanland, R [1 ]
Button, CC [1 ]
Wang, XY [1 ]
David, JPR [1 ]
Ouali, FF [1 ]
Holden, AJ [1 ]
机构：
[1] Bookham Technol, Towcester NN12 8EQ, Northants, England
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 2003 | 2003年 / 180期
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We establish the MOVPE growth conditions of InAs/GaAs quantum dots (QDs) with photoluminescence (PL) emission from 1.1 to 1.25 mum in a commercial 8x3" multiwafer reactor (Aixtron 2400) for the production of telecommunication devices. We describe techniques to improve the QD size uniformity and minimize the number of defects. For PL emission at 1.1 mum,we achieve a dot density of similar to10(11) cm(-2) as measured by transmission electron microscopy.
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页码：107 / 110
页数：4
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