Spin transport in benzofurane bithiophene based organic spin valves

被引:5
|
作者
Palosse, Mathieu [1 ,2 ,3 ,4 ]
Seguy, Isabelle [1 ,2 ,3 ,4 ]
Bedel-Pereira, Elena [1 ,2 ,3 ,4 ]
Villeneuve-Faure, Christina [1 ,2 ,3 ,4 ,5 ]
Mallet, Charlotte [6 ]
Frere, Pierre [6 ]
Warot-Fonrose, Benedicte [1 ,2 ,3 ,4 ,7 ]
Biziere, Nicolas [1 ,2 ,3 ,4 ,7 ]
Bobo, Jean-Francois [1 ,2 ,3 ,4 ,8 ]
机构
[1] CNRS, LAAS, F-31400 Toulouse, France
[2] Univ Toulouse, F-31077 Toulouse, France
[3] UPS, INSA, INP, ISAE, F-31077 Toulouse, France
[4] CEMES, F-31077 Toulouse, France
[5] Univ Toulouse 3, LAPLACE, F-31062 Toulouse 9, France
[6] Univ Angers, MOLTECH Anjou, CNRS, UMR 6200, F-49045 Angers, France
[7] CNRS, CEMES, UPR 8011, FR-31055 Toulouse 4, France
[8] CNRS, CEMES, ONERA, NMH, FR-31055 Toulouse 4, France
来源
AIP ADVANCES | 2014年 / 4卷 / 01期
关键词
SEMICONDUCTORS; SPINTRONICS; TEMPERATURE; INJECTION; MOLECULES; DEVICES; FILMS;
D O I
10.1063/1.4862675
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper we present spin transport in organic spin-valves using benzofurane bithiophene (BF3) as spacer layer between NiFe and Co ferromagnetic electrodes. The use of an AlOx buffer layer between the top electrode and the organic layer is discussed in terms of improvements of stacking topology, electrical transport and oxygen contamination of the BF3 layer. A study of magnetic hysteresis cycles evidences spin-valve behaviour. Transport properties are indicative of unshorted devices with non-linear I-V characteristics. Finally we report a magnetoresistance of 3% at 40 K and 10 mV in a sample with a 50 nm thick spacer layer, using an AlOx buffer layer. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
引用
收藏
页数:7
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